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| IPB180N03S4L-H0 OptiMOS(R)-T Power-Transistor Product Summary V DS R DS(on) ID 30 0.95 180 V m A Features * N-channel - Enhancement mode * AEC qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (RoHS compliant) * Ultra low Rds(on) * 100% Avalanche tested PG-TO263-7-3 Type IPB180N03S4L-H0 Package PG-TO263-7-3 Marking 4N03LH0 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25C, V GS=10V1) T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 C T C=25 C I D=90 A Value 180 180 720 980 180 16 250 -55 ... +175 55/175/56 mJ A V W C Unit A Rev. 0.1 page 1 2009-11-19 IPB180N03S4L-H0 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=200 A V DS=30 V, V GS=0 V, T j=25 C V DS=18 V, V GS=0 V, T j=85 C2) Gate-source leakage current Drain-source on-state resistance Drain-source on-state resistance I GSS R DS(on) RDS(on) V GS=16 V, V DS=0 V V GS=4.5 V, I D=90 A V GS=10 V, I D=100 A 30 1 1.5 0.01 2.2 1 A V 0.6 62 40 K/W - 5 1 0.95 0.73 60 100 1.30 0.95 nA m m Rev. 0.1 page 2 2009-11-19 IPB180N03S4L-H0 Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Reverse recovery charge2) 1) C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=100 A, R G=1.6 V GS=0 V, V DS=25 V, f =1 MHz - 17500 3720 175 9 7 60 25 23000 pF 4800 350 ns Q gs Q gd Qg V plateau V DD=24 V, I D=180 A, V GS=0 to 10 V - 55 28 230 3.1 72 56 300 - nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=20 V, I F=100A, di F/dt =100 A/s - 0.9 250 280 180 720 1.3 - A V ns nC Current is limited by bondwire; with an R thJC = 0.6 K/W the chip is able to carry 400A at 25C. Defined by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 0.1 page 3 2009-11-19 IPB180N03S4L-H0 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V 300 200 180 250 160 140 120 200 P tot [W] 150 I D [A] 0 50 100 150 200 100 80 100 60 40 20 50 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0 parameter: t p 1000 10 s 100 s 1 ms 1 s 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 100 0.5 100 10-1 0.1 0.05 Z thJC [K/W] I D [A] 0.01 10 10-2 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 0.1 page 4 2009-11-19 IPB180N03S4L-H0 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 10 V 4.5 V 4V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 C parameter: V GS 14 600 3V 6V 12 3.5 V 500 10 3.5 V R DS(on) [m] 3V 400 8 I D [A] 300 6 200 4 100 2 2.5 V 4V 4.5 V 0 0 1 2 3 0 4 0 100 200 300 400 10 V 500 600 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 500 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V 1.5 400 1.25 300 R DS(on) [m] I D [A] 1 200 0.75 100 +175C +25C -55 C 0 1 2 3 4 5 0.5 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 0.1 page 5 2009-11-19 IPB180N03S4L-H0 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2 1.75 2000 A 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 105 Ciss 1.5 1.25 200 A 104 V GS(th) [V] 1 0.75 0.5 0.25 0 -60 -20 20 60 100 140 180 C [pF] Coss 103 Crss 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I AS = f(t AV) parameter: T j(start) 1000 25 C 10 2 100 100 C I AV [A] I F [A] 150 C 175 C 25 C 101 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 1 10 100 1000 V SD [V] t AV [s] Rev. 0.1 page 6 2009-11-19 IPB180N03S4L-H0 13 Typical avalanche energy E AS = f(T j) parameter: I D 2000 1750 1500 45 A 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 34 33 32 V BR(DSS) [V] 1250 E AS [mJ] 1000 90 A 31 750 500 250 0 25 75 125 175 30 180 A 29 28 -60 -20 20 60 100 140 180 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 180 A pulsed parameter: V DD 12 16 Gate charge waveforms V GS 10 Qg 8 8V V GS [V] 32 V 6 4 2 Q gs Q gd Q gate 0 0 40 80 120 160 200 240 Q gate [nC] Rev. 0.1 page 7 2009-11-19 IPB180N03S4L-H0 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2008 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 0.1 page 8 2009-11-19 IPB180N03S4L-H0 Revision History Version Date Changes Rev. 0.1 page 9 2009-11-19 |
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